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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 1000 @ 3A 4V 8A 2W -100V
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Buying Options
Total Price: USD $0.87
Unit Price: USD $0.8712
≥1 USD $0.8712
≥10 USD $0.70312
≥100 USD $0.557128
≥500 USD $0.472243
≥1000 USD $0.384692
≥3000 USD $0.362146
Inventory: 780
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status Non-RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.5mm
Length 9.9mm
Height 9.2mm

Technical

hFE Min 1000
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -100V
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 50μA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V
Max Collector Current 50μA
Collector Emitter Voltage (VCEO) 100V
Transistor Type PNP - Darlington
Power - Max 2W
Power Dissipation 80W
Element Configuration Single
Polarity PNP
Number of Elements 1
Base Part Number TIP10*
Current Rating -8A
Max Power Dissipation 2W
Voltage - Rated DC -100V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2007
Packaging Tube
Operating Temperature -65°C~150°C TJ

Physical

Weight 1.214g
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

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