SS9011FBU
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 54 @ 1mA 5V 30mA 400mW 2MHz
PDF
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.055422
≥1 USD $0.055422
≥10 USD $0.052282
≥100 USD $0.049326
≥500 USD $0.046532
≥1000 USD $0.043897
Inventory: 1176
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 28
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Frequency - Transition 2MHz
Current - Collector (Ic) (Max) 30mA
Voltage - Collector Emitter Breakdown (Max) 30V
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 54 @ 1mA 5V
Max Collector Current 30mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Gain Bandwidth Product 2MHz
Power - Max 400mW
Power Dissipation 400mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Frequency 2MHz
Current Rating 30mA
Max Power Dissipation 400mW
Voltage - Rated DC 30V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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