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PN2222ANLBU

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 625mW 300MHz
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

hFE Min 100
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector Emitter Saturation Voltage 1V
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 40V
Transistor Type NPN
Gain Bandwidth Product 300MHz
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number PN2222
Frequency 300MHz
Current Rating 1A
Max Power Dissipation 625mW
Voltage - Rated DC 40V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Weight 179mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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