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P2N2907ARL1

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 10V 600mA 625mW 200MHz
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Technical

Turn On Time-Max (ton) 50ns
Turn Off Time-Max (toff) 110ns
hFE Min 75
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) -60V
Collector Emitter Saturation Voltage -1.6V
Transition Frequency 200MHz
Current - Collector (Ic) (Max) 600mA
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 1.6V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 200MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number P2N2907
Time@Peak Reflow Temperature-Max (s) 30
Current Rating -600mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -60V
Subcategory Other Transistors
Additional Feature EUROPEAN PART NUMBER
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole

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