P2N2222AZL1G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 40V 0.6A TO-92
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Turn Off Time-Max (toff) 285ns
hFE Min 35
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector Emitter Saturation Voltage 1V
Transition Frequency 300MHz
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 1V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 300MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number P2N2222
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 600mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 40V
Subcategory Other Transistors
HTS Code 8541.21.00.75
Additional Feature EUROPEAN PART NUMBER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2006
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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