NJW21194G
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT 200W NPN
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Buying Options
Total Price: USD $3.06
Unit Price: USD $3.0624
≥1 USD $3.0624
≥10 USD $2.57224
≥100 USD $2.081024
≥500 USD $1.849778
≥1000 USD $1.583868
≥3000 USD $1.49138
Inventory: 259
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 15.8mm
Height 20.1mm
Technical
hFE Min 20
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 400V
Max Breakdown Voltage 250V
Collector Emitter Saturation Voltage 4V
Transition Frequency 4MHz
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 250V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 4MHz
Transistor Application AMPLIFIER
Power - Max 200W
Power Dissipation 200mW
Element Configuration Single
Number of Elements 1
Pin Count 3
Frequency 4MHz
Max Power Dissipation 200mW
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2005
Packaging Tube
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 29 Weeks
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