Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 350V
Transition Frequency 35MHz
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 8A
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5A 5V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 350V
Polarity/Channel Type PNP
Gain Bandwidth Product 35MHz
Transistor Application AMPLIFIER
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 230W
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -65°C~150°C TJ