NJL4281DG
RoHS
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Package TO-264-5
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN + Diode (Isolated) Single Bipolar (BJT) Transistor 80 @ 5A 5V 100muA 230W 35MHz
PDF
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Buying Options
Total Price: USD $30.8
Unit Price: USD $30.79995
≥1 USD $30.79995
≥10 USD $25.2719
≥100 USD $24.48245
≥500 USD $23.69205
≥1000 USD $22.9026
Inventory: 1110
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 21 hours ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-5
Number of Pins 5
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 260V
Max Power Dissipation 230W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 35MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 230W
Transistor Application AMPLIFIER
Gain Bandwidth Product 35MHz
Transistor Type NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 8A
Collector Emitter Breakdown Voltage 350V
Transition Frequency 35MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Dimensions
Height 6.35mm
Length 6.35mm
Width 50.8mm
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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