NJL21193DG
RoHS
/
Package TO-264-5
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP SINGLE WITH BUILT-IN DIODE Bipolar (BJT) Transistor 25 @ 8A 5V 16A 200W 4MHz
PDF
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Buying Options
Total Price: USD $13.8
Unit Price: USD $13.8016
≥1 USD $13.8016
≥10 USD $11.32495
≥100 USD $10.9706
≥500 USD $10.6172
≥1000 USD $10.26285
Inventory: 1170
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 400V
Transition Frequency 4MHz
Current - Collector (Ic) (Max) 16A
Collector Emitter Breakdown Voltage 250V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A 5V
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 4V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power Dissipation 200W
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 4MHz
Current Rating -16A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 200W
Voltage - Rated DC -250V
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2006
Packaging Tube
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case TO-264-5
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
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