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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 250mA 1V 500nA 1W 50MHz
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Buying Options
Total Price: USD $0.12
Unit Price: USD $0.1232
≥1 USD $0.1232
Inventory: 1280
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 100
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 80V
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA 1V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Power Dissipation 1W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number MPSW56
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 50MHz
Current Rating -1A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Max Power Dissipation 1W
Voltage - Rated DC -80V
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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