MPSW55G
RoHS
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Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 250mA 1V 500nA 1W 50MHz
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Buying Options
Total Price: USD $1.74
Unit Price: USD $1.7404
≥1 USD $1.7404
≥10 USD $1.42785
≥100 USD $1.3832
≥500 USD $1.33855
≥1000 USD $1.2939
Inventory: 1085
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSW55
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA 1V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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