MPSW55
RoHS
/
Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT 500mA 60V 1W PNP
PDF
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Buying Options
Total Price: USD $1.65
Unit Price: USD $1.6473
≥1 USD $1.6473
≥10 USD $1.35185
≥100 USD $1.3091
≥500 USD $1.2673
≥1000 USD $1.22455
Inventory: 3004
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
hFE Min 100
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) -60V
Collector Emitter Saturation Voltage -500mV
Transition Frequency 50MHz
Current - Collector (Ic) (Max) 500mA
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA 1V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 500mV
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number MPSW55
Time@Peak Reflow Temperature-Max (s) 30
Current Rating -500mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 1W
Voltage - Rated DC -60V
Subcategory Other Transistors
HTS Code 8541.29.00.75
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2009
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 Long Body
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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