MPSW45RLRE
RoHS
/
Package TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Transistors Darlington 1A 50V NPN
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Continuous Collector Current 1A
hFE Min 25000
Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 50V
Frequency - Transition 100MHz
Transition Frequency 100MHz
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 25000 @ 200mA 5V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 1.5V
Transistor Type NPN - Darlington
Power Dissipation 1W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number MPSW45
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 1A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 1W
Voltage - Rated DC 40V
Subcategory Other Transistors
HTS Code 8541.29.00.75
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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