MPSW13RLRA
RoHS
/
Package TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Darlington Transistors 1A 30V NPN
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Continuous Collector Current 1A
Emitter Base Voltage (VEBO) 10V
Collector Base Voltage (VCBO) 30V
Frequency - Transition 125MHz
Transition Frequency 125MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 1.5V
Transistor Type NPN - Darlington
Power Dissipation 1W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 1A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 1W
Voltage - Rated DC 30V
Subcategory Other Transistors
HTS Code 8541.29.00.75
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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