MPSW06G
RoHS
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Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 250mA 1V 500nA 1W 50MHz
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Buying Options
Total Price: USD $6.18
Unit Price: USD $6.17975
≥1 USD $6.17975
≥10 USD $5.0711
≥100 USD $4.91245
≥500 USD $4.7538
≥1000 USD $4.59515
Inventory: 1258
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSW06
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 250mA 1V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 250mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
hFE Min 80
Dimensions
Height 6.35mm
Length 6.35mm
Width 12.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
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