MPSW06
RoHS
/
Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 250mA 1V 500nA 1W 100MHz
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Buying Options
Total Price: USD $79.2
Unit Price: USD $79.201808
≥1 USD $79.201808
≥10 USD $74.718685
≥100 USD $70.489323
≥500 USD $66.499365
≥1000 USD $62.735249
Inventory: 7545
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2009
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 500mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MPSW06
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 250mA 1V
Current - Collector Cutoff (Max) 500nA
JEDEC-95 Code TO-226AE
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 250mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
hFE Min 80
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
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