Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 100V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 100V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 500mA