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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 10000 @ 100mA 5V 500mA 625mW 200MHz
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.4807
≥1 USD $0.4807
≥10 USD $0.39425
≥100 USD $0.3819
≥500 USD $0.36955
≥1000 USD $0.3572
Inventory: 1092
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSA28
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Continuous Collector Current 500mA

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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