Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 4V
Collector Emitter Saturation Voltage 250mV
Transition Frequency 125MHz
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 40V
Polarity/Channel Type NPN
Gain Bandwidth Product 125MHz
Transistor Application AMPLIFIER
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 625mW
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ