MPSA12G
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN DARL 20V TO-92
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 20000
Emitter Base Voltage (VEBO) 10V
Collector Emitter Saturation Voltage 1V
Collector Emitter Breakdown Voltage 20V
Vce Saturation (Max) @ Ib, Ic 1V @ 10μA, 10mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA 5V
Max Collector Current 100nA
Collector Emitter Voltage (VCEO) 20V
Transistor Type NPN - Darlington
Power Dissipation 625mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number MPSA12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 20V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2002
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Alternative Model
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