MPS751G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 75 @ 1A 2V 100nA ICBO 625mW 75MHz
PDF
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Buying Options
Total Price: USD $0.19
Unit Price: USD $0.1938
≥1 USD $0.1938
≥10 USD $0.1596
≥100 USD $0.1539
≥500 USD $0.14915
≥1000 USD $0.1444
Inventory: 27010
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC Unknown
Radiation Hardening No
Dimensions
Width 4.191mm
Length 5.1816mm
Height 5.334mm
Technical
hFE Min 75
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 75MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 60V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 75MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number MPS751
Time@Peak Reflow Temperature-Max (s) 40
Frequency 75MHz
Current Rating -2A
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -60V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
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