MPS750G
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 75 @ 1A 2V 100nA ICBO 625mW 75MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 75
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 75MHz
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 40V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 75MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number MPS750
Time@Peak Reflow Temperature-Max (s) 40
Frequency 75MHz
Current Rating 1A
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -40V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 2 days ago)
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