MPS6601G
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 50 @ 500mA 1V 100nA 625mW 100MHz
PDF
/
Buying Options
Total Price: USD $31.55
Unit Price: USD $31.548953
≥1 USD $31.548953
≥10 USD $29.763163
≥100 USD $28.078458
≥500 USD $26.489112
≥1000 USD $24.98973
Inventory: 1089
Minimum: 1
-
+
Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 2 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPS6601
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 4V
hFE Min 50
Turn On Time-Max (ton) 55ns
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Recommended For You
MPS6601G+price,MPS6601G+datasheet,MPS6601G+in stock,buy+MPS6601G,finder+MPS6601G,MPS6601G+tutorials,MPS6601G+download