MPS6523G
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 300 @ 2mA 10V 50nA ICBO 625mW 340MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 150
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 25V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 340MHz
Collector Emitter Breakdown Voltage 25V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 2mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 25V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number MPS6523
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 100mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -25V
Subcategory Other Transistors
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2006
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 6 days ago)
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