MPS6513
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 90 @ 2mA 10V 200mA 625mW 40V
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 90
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 40V
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 30V
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 2mA 10V
Max Collector Current 200mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Power - Max 625mW
Power Dissipation 625mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Current Rating 100mA
Max Power Dissipation 625mW
Voltage - Rated DC 30V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2005
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Weight 201mg
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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