MPS4250G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 250 @ 10mA 5V 10nA ICBO 625mW 40MHz
PDF
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Buying Options
Total Price: USD $0.07
Unit Price: USD $0.06745
≥1 USD $0.06745
≥10 USD $0.0551
≥100 USD $0.05415
≥500 USD $0.05225
≥1000 USD $0.05035
Inventory: 58744
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 6.35mm
Length 6.35mm
Height 6.35mm
Technical
hFE Min 250
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector Emitter Saturation Voltage -250mV
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 10nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10mA 5V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 40V
Transistor Type PNP
Polarity/Channel Type PNP
Power - Max 625mW
Power Dissipation 625W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number MPS4250
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -40V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2009
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 22 hours ago)
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