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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 30 @ 50mA 5V 800mA 625mW 100MHz
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Total Price: USD $0.04
Unit Price: USD $0.044
≥1 USD $0.044
Inventory: 61494
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

hFE Min 30
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Frequency - Transition 100MHz
Collector Emitter Saturation Voltage 250mV
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 30V
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 5V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type PNP
Gain Bandwidth Product 100MHz
Power - Max 625mW
Power Dissipation 625mW
Element Configuration Single
Polarity PNP
Number of Elements 1
Frequency 100MHz
Current Rating -800mA
Max Power Dissipation 625mW
Voltage - Rated DC -30V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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