MPS2222RLRMG
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 625mW 250MHz
PDF
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Buying Options
Total Price: USD $0.07
Unit Price: USD $0.067652
≥1 USD $0.067652
≥10 USD $0.063822
≥100 USD $0.060205
≥500 USD $0.056803
≥1000 USD $0.053585
Inventory: 1096
Minimum: 1
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Technical Details
Technical
Published 2007
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPS2222
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 250MHz
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Collector Emitter Saturation Voltage 1.6V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 35
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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