Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 350V
Max Breakdown Voltage 350V
Collector Emitter Saturation Voltage -1V
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 350V
Polarity/Channel Type PNP
Gain Bandwidth Product 200MHz
Transistor Application SWITCHING
Element Configuration Single
Base Part Number MMBT6520
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 225mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ