MMBT6517LT3
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 350V 0.1A SOT-23
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 350V
Collector Emitter Saturation Voltage 1V
Transition Frequency 40MHz
Current - Collector (Ic) (Max) 100mA
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
JEDEC-95 Code TO-236AB
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 1V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 200MHz
Transistor Application SWITCHING
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G3
Pin Count 3
Base Part Number MMBT6517
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 500mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 225mW
Voltage - Rated DC 350V
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2001
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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