Emitter Base Voltage (VEBO) 4.5V
Collector Base Voltage (VCBO) 50V
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage 700mV
Transition Frequency 30MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100μA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 50V
Polarity/Channel Type NPN
Gain Bandwidth Product 30MHz
Transistor Application AMPLIFIER
Element Configuration Single
Base Part Number MMBT5210
Max Power Dissipation 350mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ