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MJW0302AG

ON Semiconductor
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole PNP Single Bipolar (BJT) Transistor 75 @ 3A 5V 10muA ICBO 150W 30MHz
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Buying Options
Total Price: USD $3.03
Unit Price: USD $3.025929
≥1 USD $3.025929
≥10 USD $2.854652
≥100 USD $2.693069
≥500 USD $2.540635
≥1000 USD $2.396824
Inventory: 1149
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 75
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 260V
Transition Frequency 30MHz
Collector Emitter Breakdown Voltage 260V
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Current - Collector Cutoff (Max) 10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A 5V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 260V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 30MHz
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Power Dissipation 150W
Element Configuration Single
Number of Elements 1
Pin Count 3
Frequency 30MHz
Current Rating -15A
Max Power Dissipation 150W
Voltage - Rated DC -260V
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature -65°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)

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