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MJD253T4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT PNP 100V 4A 3-Pin(2+Tab) DPAK T/R
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Buying Options
Total Price: USD $0.49
Unit Price: USD $0.4928
≥1 USD $0.4928
≥10 USD $0.42328
≥100 USD $0.294448
≥500 USD $0.229856
≥1000 USD $0.186833
Inventory: 16719
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 1.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 40MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD253
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 40MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 40

Dimensions

Height 2.38mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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