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RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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Buying Options
Total Price: USD $1.08
Unit Price: USD $1.0773
≥1 USD $1.0773
≥10 USD $0.88445
≥100 USD $0.8569
≥500 USD $0.82935
≥1000 USD $0.8018
Inventory: 1139
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

hFE Min 50
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 400V
Max Breakdown Voltage 350V
Collector Emitter Saturation Voltage 750mV
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 10V
Max Collector Current 300mA
Collector Emitter Voltage (VCEO) 350V
Transistor Type NPN
Polarity/Channel Type NPN
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number KSP45
Current Rating 300mA
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 350V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Factory Lead Time 6 Weeks

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