KSP43TA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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Buying Options
Total Price: USD $0.38
Unit Price: USD $0.3784
≥1 USD $0.3784
≥10 USD $0.26752
≥100 USD $0.13508
≥500 USD $0.110211
≥1000 USD $0.08177
Inventory: 1093
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 200V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 500mA
Frequency 50MHz
Base Part Number KSP43
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 200V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
hFE Min 40
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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