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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 8mA 10V 100mA 350mW 620MHz
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Buying Options
Total Price: USD $0.37
Unit Price: USD $0.370202
≥1 USD $0.370202
≥10 USD $0.349247
≥100 USD $0.329479
≥500 USD $0.310831
≥1000 USD $0.293237
Inventory: 1165
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Supplier Device Package TO-92-3

Technical

Operating Temperature 135°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 135°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Max Power Dissipation 350mW
Current Rating 100mA
Frequency 620MHz
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
Gain Bandwidth Product 620MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 8mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 620MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4V
hFE Min 30

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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