Max Junction Temperature (Tj) 150°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage 4V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10μA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN - Darlington
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 1.75W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ