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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT PNP Epitaxial Sil
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 1334
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

VCEsat-Max 1 V
hFE Min 60
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -80V
Max Breakdown Voltage 60V
Collector Emitter Saturation Voltage -1V
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 10μA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 40MHz
Transistor Application SWITCHING
Power Dissipation 1.67W
Element Configuration Single
Number of Elements 1
Base Part Number KSE45H
Frequency 40MHz
Current Rating -10A
Max Power Dissipation 1.67W
Voltage - Rated DC -80V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2001
Packaging Bulk
Operating Temperature 150°C TJ

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