KSE350STU
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Epitaxial Sil
PDF
/
Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Inventory: 32282
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
hFE Min 30
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -300V
Max Breakdown Voltage 300V
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 60V
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 300V
Transistor Type PNP
Polarity/Channel Type PNP
Power Dissipation 20W
Element Configuration Single
Number of Elements 1
Current Rating -500mA
Max Power Dissipation 20W
Voltage - Rated DC -300V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2001
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 761mg
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 7 Weeks
Alternative Model
Recommended For You
KSE350STU+price,KSE350STU+datasheet,KSE350STU+in stock,buy+KSE350STU,finder+KSE350STU,KSE350STU+tutorials,KSE350STU+download