KSE3055T
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 4A 4V 700muA 600mW 2MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 20
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 70V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700μA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Gain Bandwidth Product 2MHz
Power Dissipation 600mW
Element Configuration Single
Number of Elements 1
Frequency 2MHz
Current Rating 10A
Max Power Dissipation 600mW
Voltage - Rated DC 60V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
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