KSE2955T
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 20 @ 4A 4V 10A 600mW 2MHz
PDF
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Inventory: 605
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 20
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -70V
Frequency - Transition 2MHz
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700μA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 8V
Transistor Type PNP
Gain Bandwidth Product 2MHz
Power - Max 600mW
Power Dissipation 600mW
Element Configuration Single
Polarity PNP
Number of Elements 1
Frequency 2MHz
Current Rating -10A
Max Power Dissipation 600mW
Voltage - Rated DC -60V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Supplier Device Package TO-220-3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
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