KSE182PWD
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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANSISTOR NPN 80V DIP
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Technical Details
Technical
Frequency - Transition 500MHz
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Transistor Type NPN
Power - Max 1.5W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Alternative Model
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