KSD986YSTSSTU
RoHS
/
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 8000 @ 1A 2V 10muA ICBO 1W 150V
PDF
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Buying Options
Total Price: USD $0.12
Unit Price: USD $0.12445
≥1 USD $0.12445
≥10 USD $0.1026
≥100 USD $0.09975
≥500 USD $0.09595
≥1000 USD $0.0931
Inventory: 32407
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 8000
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 150V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max) 10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 8000 @ 1A 2V
Max Collector Current 1.5A
Collector Emitter Voltage (VCEO) 80V
Transistor Type NPN - Darlington
Element Configuration Single
Polarity NPN
Number of Elements 1
Current Rating 1.5A
Max Power Dissipation 1W
Voltage - Rated DC 80V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ
Physical
Weight 758mg
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
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