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KSD985OSTU

ON Semiconductor
RoHS
/
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 4000 @ 1A 2V 1.5A 1W 150V
PDF
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Buying Options
Total Price: USD $0.16
Unit Price: USD $0.159688
≥1 USD $0.159688
≥200 USD $0.061798
≥500 USD $0.059632
≥1000 USD $0.058555
Inventory: 4793
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Continuous Collector Current 1.5A
hFE Min 4000
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 150V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max) 10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A 2V
Max Collector Current 1.5A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN - Darlington
Power Dissipation 1W
Element Configuration Single
Polarity NPN
Number of Elements 1
Current Rating 1.5A
Max Power Dissipation 1W
Voltage - Rated DC 60V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ

Physical

Weight 761mg
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole

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