KSD882YSTSTU
RoHS
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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN KSD882 Bipolar (BJT) Transistor 160 @ 1A 2V 3A 1W 90MHz
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD882
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 90MHz
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