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KSD5018TU

ON Semiconductor
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1.5V @ 20mA 3A 4A 40W 600V
PDF
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.2818
≥1 USD $0.2818
≥200 USD $0.109063
≥500 USD $0.105229
≥1000 USD $0.103338
Inventory: 1158
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 275V
Max Power Dissipation 40W
Current Rating 4A
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 40W
Power - Max 40W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 275V
Max Collector Current 4A
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 3A
Collector Emitter Breakdown Voltage 275V
Voltage - Collector Emitter Breakdown (Max) 275V
Current - Collector (Ic) (Max) 4A
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 600V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 4A

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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