KSD471ACGTA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Epitaxial Transistor
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Total Price: USD $0.05
Unit Price: USD $0.0528
≥1 USD $0.0528
Inventory: 50580
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
hFE Min 120
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Max Breakdown Voltage 30V
Transition Frequency 130MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 1V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 130MHz
Transistor Application AMPLIFIER
Power Dissipation 800mW
Element Configuration Single
Number of Elements 1
Base Part Number KSD471
Frequency 130MHz
Current Rating 1A
Terminal Position BOTTOM
Max Power Dissipation 800mW
Voltage - Rated DC 30V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Alternative Model
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