KSD471ACGBU
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 100mA 1V 100nA ICBO 800mW 130MHz
PDF
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Buying Options
Total Price: USD $0.03
Unit Price: USD $0.0264
≥1 USD $0.0264
Inventory: 797373
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 120
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 1V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Gain Bandwidth Product 130MHz
Power Dissipation 800mW
Element Configuration Single
Number of Elements 1
Base Part Number KSD471
Frequency 130MHz
Current Rating 1A
Max Power Dissipation 800mW
Voltage - Rated DC 30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Weight 179mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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