KSD362R
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 5A 5V 20muA ICBO 40W 10MHz
PDF
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Buying Options
Total Price: USD $0.45
Unit Price: USD $0.454066
≥1 USD $0.454066
≥10 USD $0.428364
≥100 USD $0.404119
≥500 USD $0.38124
≥1000 USD $0.359663
Inventory: 1169
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 20
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 150V
Transition Frequency 10MHz
Collector Emitter Breakdown Voltage 70V
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Current - Collector Cutoff (Max) 20μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5A 5V
Max Collector Current 5A
Collector Emitter Voltage (VCEO) 70V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 10MHz
Transistor Application AMPLIFIER
Power Dissipation 40W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Frequency 10MHz
Current Rating 5A
Max Power Dissipation 40W
Voltage - Rated DC 70V
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
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