KSD261CYBU
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 100mA 1V 100nA ICBO 500mW 40V
PDF
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.057987
≥1 USD $0.057987
≥10 USD $0.054701
≥100 USD $0.051606
≥500 USD $0.048686
≥1000 USD $0.04593
Inventory: 1189
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 120
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector Emitter Saturation Voltage 180mV
Collector Emitter Breakdown Voltage 20V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 20V
Transistor Type NPN
Power Dissipation 500mW
Element Configuration Single
Number of Elements 1
Base Part Number KSD261
Current Rating 500mA
Max Power Dissipation 500mW
Voltage - Rated DC 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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